The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Jun. 07, 2011
Kai Frohberg, Niederau, DE;
Dominik Olligs, Dresden, DE;
Jens Heinrich, Wachau, DE;
Katrin Reiche, Goltzscha, DE;
Kai Frohberg, Niederau, DE;
Dominik Olligs, Dresden, DE;
Jens Heinrich, Wachau, DE;
Katrin Reiche, Goltzscha, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein electrical interconnects between circuit elements based on a buried sublevel metallization may provide improved transistor density. One illustrative method disclosed herein includes forming a contact dielectric layer above first and second transistor elements of a semiconductor device, and after forming the contact dielectric layer, forming a buried conductive element below an upper surface of the contact dielectric layer, the conductive element providing an electrical connection between the first and second transistor elements.