The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Nov. 19, 2013
Applicant:
Globalfoundries, Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES, INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 23/532 (2006.01); H01L 29/772 (2006.01); H01L 29/92 (2006.01); H01L 21/20 (2006.01); H01L 23/498 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49827 (2013.01); H01L 21/3212 (2013.01); H01L 21/76816 (2013.01);
Abstract
Integrated circuits with close electrical contacts and methods for fabricating such integrated circuits are provided. The method includes forming a first and a second contact in an interlayer dielectric, and forming a recess between the first and second contact. A etch mask is formed overlying the interlayer dielectric, and the etch mask is removed from over a recess mid-point. A center contact is formed in the interlayer dielectric at the recess mid-point.