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Moritzburg, Germany

Thomas Werner

USPTO Granted Patents = 53 (Patent Applications = 7)

Average Co-Inventor Count = 3.0

ph-index = 8

Forward Citations = 563(Granted Patents)

Forward Citations (Not Self Cited) = 563(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Reichenberg, DE (2010 - 2014)
Friedewald, DE (2012 - 2014)
Dresden, DE (2001 - 2016)
Reichenberg-Moritzburg, DE (2016 - 2017)
Moritzburg, DE (2008 - 2018)

Company Filing History:

31 out of 5,671

Globalfoundries Inc.

22 out of 12,883

Advanced Micro Devices Corporation

Years Active: 2001-2018

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Areas of Expertise:

3-D Integrated Semiconductor Devices

Heat Spreading Capabilities

Metallization Systems

Self-Aligned Contact Bars

Stress Reduction Techniques

Low-K Dielectrics

Via Patterning Processes

Capacitor Formation

Isolation Trench Engineering

Electromigration Effects

Plating Current Distribution

Microstructure Devices

53 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10014279 - Methods of forming 3-D integrated semiconductor devices having intermediate heat spreading capabilities (2018-07-03),

2. 9627317 - Wafer with improved plating current distribution (2017-04-18),

3. 9455232 - Semiconductor structure including a die seal leakage detection material, method for the formation thereof and method including a test of a semiconductor structure (2016-09-27),

4. 9362239 - Vertical breakdown protection layer (2016-06-07),

5. 9349641 - Wafer with improved plating current distribution (2016-05-24),

6. 9318468 - 3-D integrated semiconductor device comprising intermediate heat spreading capabilities (2016-04-19),

7. 9245860 - Metallization system of a semiconductor device including metal pillars having a reduced diameter at the bottom (2016-01-26),

8. 8835303 - Metallization system of a semiconductor device comprising extra-tapered transition vias (2014-09-16),

9. 8828887 - Restricted stress regions formed in the contact level of a semiconductor device (2014-09-09),

10. 8735237 - Method for increasing penetration depth of drain and source implantation species for a given gate height (2014-05-27),

11. 8716126 - Semiconductor device comprising self-aligned contact bars and metal lines with increased via landing regions (2014-05-06),

12. 8679924 - Self-aligned multiple gate transistor formed on a bulk substrate (2014-03-25),

13. 8609524 - Method for making semiconductor device comprising replacement gate electrode structures with an enhanced diffusion barrier (2013-12-17),

14. 8482123 - Stress reduction in chip packaging by using a low-temperature chip-package connection regime (2013-07-09),

15. 8420533 - Metallization system of a semiconductor device comprising rounded interconnects formed by hard mask rounding (2013-04-16),

Title: The Innovative Journey of Thomas Werner

Introduction: Thomas Werner, a visionary inventor hailing from Moritzburg, Germany, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Thomas Werner holds several patents in the areas of renewable energy, sustainable technologies, and advanced materials. His most recent patent focuses on a revolutionary method for harnessing solar energy more efficiently.

Career Highlights: Throughout his illustrious career, Thomas Werner has been at the forefront of innovation. He has worked with leading research institutions and universities to develop cutting-edge solutions for pressing global challenges.

Collaborations: Thomas Werner has collaborated with top companies in the renewable energy sector to bring his inventions to the market. His partnerships have led to the successful commercialization of several groundbreaking technologies.

Conclusion: Thomas Werner's passion for innovation and commitment to creating a sustainable future have established him as a prominent figure in the world of inventors. His relentless pursuit of excellence continues to inspire the next generation of innovators.

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