The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Jan. 31, 2011
Andy Wei, Dresden, DE;
Vivien Schroeder, Ottendorf-Okrilla, DE;
Thilo Scheiper, Dresden, DE;
Thomas Werner, Moritzburg, DE;
Johannes Groschopf, Radebeul, DE;
Andy Wei, Dresden, DE;
Vivien Schroeder, Ottendorf-Okrilla, DE;
Thilo Scheiper, Dresden, DE;
Thomas Werner, Moritzburg, DE;
Johannes Groschopf, Radebeul, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Three-dimensional transistors in a bulk configuration may be formed on the basis of gate openings or gate trenches provided in a mask material. Hence, self-aligned semiconductor fins may be efficiently patterned in the underlying active region in a portion defined by the gate opening, while other gate openings may be efficiently masked, in which planar transistors are to be provided. After patterning the semiconductor fins and adjusting the effective height thereof, the further processing may be continued on the basis of process techniques that may be commonly applied to the planar transistors and the three-dimensional transistors.