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For the Inventor, By the Inventor

Radebeul, Germany

Johannes F Groschopf

USPTO Granted Patents = 8 

Average Co-Inventor Count = 4.1

ph-index = 4

Forward Citations = 46(Granted Patents)


Location History:

  • Roederland, DE (2011)
  • Radebeul, DE (2012 - 2014)

Company Filing History:

goldMedal8 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2011-2014

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8 patents (USPTO):
1. 8748302 - Replacement gate approach for high-k metal gate stacks by using a multi-layer contact level (2014-06-10),
2. 8679924 - Self-aligned multiple gate transistor formed on a bulk substrate (2014-03-25),
3. 8585465 - Planarization of a material system in a semiconductor device by using a non-selective in situ prepared slurry (2013-11-19),
4. 8506770 - Electrochemical planarization system comprising enhanced electrolyte flow (2013-08-13),
5. 8357575 - Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers (2013-01-22),
6. 8338306 - Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistors (2012-12-25),
7. 8247281 - Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers (2012-08-21),
8. 8021942 - Method of forming CMOS device having gate insulation layers of different type and thickness (2011-09-20),

Title: Innovations and Contributions of Johannes F Groschopf

Introduction

Johannes F Groschopf is a notable inventor based in Radebeul, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work primarily focuses on advanced transistor designs and fabrication techniques.

Latest Patents

One of his latest patents is titled "Replacement gate approach for high-k metal gate stacks by using a multi-layer contact level." This innovation addresses the dielectric material used for encapsulating gate electrode structures, enhancing gap filling capabilities and etch resistivity. This approach minimizes material erosion during the replacement of placeholder materials, leading to improved yield and device uniformity. Another significant patent is "Self-aligned multiple gate transistor formed on a bulk substrate." This invention allows for the efficient formation of three-dimensional transistors using gate openings in a mask material, optimizing the patterning of semiconductor fins in the active region.

Career Highlights

Johannes F Groschopf is currently employed at Globalfoundries Inc., where he continues to push the boundaries of semiconductor technology. His expertise in the field has led to numerous advancements that benefit the industry.

Collaborations

He has collaborated with notable colleagues such as Andy C Wei and Andreas Ott, contributing to various projects that enhance semiconductor manufacturing processes.

Conclusion

Johannes F Groschopf's innovative work and patents have significantly impacted the semiconductor industry. His contributions continue to pave the way for advancements in technology and device performance.

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