The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2012

Filed:

Jun. 24, 2010
Applicants:

Klaus Hempel, Dresden, DE;

Patrick Press, Dresden, DE;

Vivien Schroeder, Ottendorf-Okrilla, DE;

Berthold Reimer, Dresden, DE;

Johannes Groschopf, Radebeul, DE;

Inventors:

Klaus Hempel, Dresden, DE;

Patrick Press, Dresden, DE;

Vivien Schroeder, Ottendorf-Okrilla, DE;

Berthold Reimer, Dresden, DE;

Johannes Groschopf, Radebeul, DE;

Assignee:

GlobalFoundries, Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a replacement gate approach, the sacrificial gate material is exposed on the basis of enhanced process uniformity, for instance during a wet chemical etch step or a CMP process, by forming a modified portion in the interlayer dielectric material by ion implantation. Consequently, the damaged portion may be removed with an increased removal rate while avoiding the creation of polymer contaminants when applying an etch process or avoiding over-polish time when applying a CMP process.


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