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For the Inventor, By the Inventor

Dresden, Germany

Patrick Press

USPTO Granted Patents = 14 

Average Co-Inventor Count = 3.8

ph-index = 4

Forward Citations = 63(Granted Patents)


Company Filing History:

goldMedal7 out of 12,867 
 
Advanced Micro Devices Corporation
 patents
silverMedal7 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2008-2014

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14 patents (USPTO):
1. 8791509 - Multiple gate transistor having homogenously silicided fin end portions (2014-07-29),
2. 8357575 - Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers (2013-01-22),
3. 8293610 - Semiconductor device comprising a metal gate stack of reduced height and method of forming the same (2012-10-23),
4. 8247281 - Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers (2012-08-21),
5. 8188871 - Drive current adjustment for transistors by local gate engineering (2012-05-29),
6. 8039335 - Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain (2011-10-18),
7. 7893503 - Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain (2011-02-22),
8. 7833874 - Technique for forming an isolation trench as a stress source for strain engineering (2010-11-16),
9. 7799682 - Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor (2010-09-21),
10. 7754554 - Methods for fabricating low contact resistance CMOS circuits (2010-07-13),
11. 7745334 - Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques (2010-06-29),
12. 7741167 - Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain (2010-06-22),
13. 7605045 - Field effect transistors and methods for fabricating the same (2009-10-20),
14. 7384877 - Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidation (2008-06-10),

Title: The Innovations of Patrick Press

Introduction

Patrick Press is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 14 patents. His work focuses on enhancing the performance and efficiency of multiple gate transistors.

Latest Patents

One of his latest patents is titled "Multiple gate transistor having homogenously silicided fin end portions." This invention addresses the electrical connection of the Fins in a multiple gate transistor, improving the uniformity of contact regions through an enhanced silicidation process. Another significant patent is "Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers." This innovation allows for the sacrificial gate material to be exposed with enhanced process uniformity, thereby improving the efficiency of the manufacturing process.

Career Highlights

Throughout his career, Patrick Press has worked with prominent companies in the semiconductor industry, including Advanced Micro Devices Corporation and Globalfoundries Inc. His expertise in the field has led to numerous advancements in transistor technology.

Collaborations

Patrick has collaborated with esteemed colleagues such as Sven Beyer and Manfred Horstmann, contributing to various projects that have pushed the boundaries of semiconductor innovation.

Conclusion

Patrick Press is a distinguished inventor whose work has significantly impacted the semiconductor industry. His patents reflect a commitment to advancing technology and improving manufacturing processes.

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