The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Apr. 18, 2007
Patrick Press, Dresden, DE;
Karla Romero, Dresden, DE;
Martin Trentzsch, Dresden, DE;
Karsten Wieczorek, Dresden, DE;
Thomas Feudel, Radebeul, DE;
Markus Lenski, Dresden, DE;
Rolf Stephan, Dresden, DE;
Patrick Press, Dresden, DE;
Karla Romero, Dresden, DE;
Martin Trentzsch, Dresden, DE;
Karsten Wieczorek, Dresden, DE;
Thomas Feudel, Radebeul, DE;
Markus Lenski, Dresden, DE;
Rolf Stephan, Dresden, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
By performing sophisticated anneal techniques, such as laser anneal, flash anneal and the like, for a metal silicide formation, such as nickel silicide, the risk of nickel silicide defects in sensitive device regions, such as SRAM pass gates, may be significantly reduced. Also, the activation of dopants may be performed in a highly localized manner, so that undue damage of gate insulation layers may be avoided when activating and re-crystallizing drain and source regions.