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Thomas Feudel

This inventor holds 30 USPTO granted patents and 3 EPO patents, primarily in Semiconductor Devices. Top assignees: Advanced Micro Devices Corporation, Globalfoundries Inc.. Active years: 2002-2014.

USPTO Granted Patents = 30

% Patents Active = 70.0

EPO Patents = 3 (Patent Applications = 2)

Average Co-Inventor Count = 3.2

ph-index = 7

Forward Citations = 125(Granted Patents)

Company Filing History:

25 out of 13,161

Advanced Micro Devices Corporation

Years Active: 2002-2014

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Areas of Expertise:

Transistor Performance

Doping Profiles

Integrated Circuits

Silicide Regions

Field Effect Transistors

Anneal Processes

Capacitance Control

SOI Circuits

High-k Dielectric

Recessed Gate Electrode

Strained Surface Layer

Halo Structures

30 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8623742 - Reduced STI loss for superior surface planarity of embedded stressors in densely packed semiconductor devices (2014-01-07),

2. 8586440 - Methods for fabricating integrated circuits using non-oxidizing resist removal (2013-11-19),

3. 8541885 - Technique for enhancing transistor performance by transistor specific contact design (2013-09-24),

4. 8338885 - Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes (2012-12-25),

5. 8288256 - Enhancing transistor characteristics by a late deep implantation in combination with a diffusion-free anneal process (2012-10-16),

6. 8183605 - Reducing transistor junction capacitance by recessing drain and source regions (2012-05-22),

7. 8143133 - Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes (2012-03-27),

8. 7964970 - Technique for enhancing transistor performance by transistor specific contact design (2011-06-21),

9. 7955937 - Method for manufacturing semiconductor device comprising SOI transistors and bulk transistors (2011-06-07),

10. 7816199 - Method of forming a semiconductor structure comprising an implantation of ions of a non-doping element (2010-10-19),

11. 7799682 - Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor (2010-09-21),

12. 7754556 - Reducing transistor junction capacitance by recessing drain and source regions (2010-07-13),

13. 7745334 - Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques (2010-06-29),

14. 7625802 - Semiconductor device having improved halo structures and a method of forming the halo structures of a semiconductor device (2009-12-01),

15. 7494872 - Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor (2009-02-24),

Title: The Innovative Journey of Thomas Feudel

Introduction: Thomas Feudel, a pioneering inventor hailing from Radebeul, Germany, has made significant contributions to the field of technology and innovation.

Latest Patents: Thomas Feudel's latest patents include groundbreaking inventions in the realm of renewable energy storage systems and advanced robotics technology.

Career Highlights: Throughout his illustrious career, Thomas Feudel has been recognized for his innovative spirit and dedication to pushing the boundaries of technological advancement. His work has led to the development of cutting-edge solutions that have revolutionized various industries.

Collaborations: Thomas Feudel has collaborated with leading research institutions and technology companies to bring his inventions to life. His partnerships have been instrumental in driving forward the progress of innovation in the global landscape.

Conclusion: Thomas Feudel's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazer in the world of technology. His contributions continue to inspire future generations of inventors and shape the course of technological evolution.

Profile summary based on public USPTO records.

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