The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7494872 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 24, 2009

Filed:

Mar. 02, 2004
Applicants:

Karsten Wieczorek, Dresden, DE;

Thomas Feudel, Radebeul, DE;

Thorsten Kammler, Ottendorf-Okrilla, DE;

Wolfgang Buchholtz, Radebeul, DE;

Inventors:

Karsten Wieczorek, Dresden, DE;

Thomas Feudel, Radebeul, DE;

Thorsten Kammler, Ottendorf-Okrilla, DE;

Wolfgang Buchholtz, Radebeul, DE;

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract

By forming an implantation mask prior to the definition of the drain and the source areas, an effective decoupling of the gate dopant concentration from that of the drain and source concentrations is achieved. Moreover, after removal of the implantation mask, the lateral dimension of the gate electrode may be defined by well-established sidewall spacer techniques, thereby providing a scaling advantage with respect to conventional approaches based on photolithography and anisotropic etching.


Find Patent Forward Citations

Wieczorek, Karsten. (2009). Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor (U.S. Patent No. 7494872). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7494872

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