The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2012
Filed:
Jan. 31, 2008
Thomas Feudel, Radebeul, DE;
Rolf Stephan, Dresden, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Thomas Feudel, Radebeul, DE;
Rolf Stephan, Dresden, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
By combining an anneal process for adjusting the effective channel length and a substantially diffusion-free anneal process performed after a deep drain and source implantation, the vertical extension of the drain and source region may be increased substantially without affecting the previously adjusted channel length. In this manner, in SOI devices, the drain and source regions may extend down to the buried insulating layer, thereby reducing the parasitic capacitance, while the degree of dopant activation and thus series resistance in the extension regions may be improved. Furthermore, less critical process parameters during the anneal process for adjusting the channel length may provide the potential for reducing the lateral dimensions of the transistor devices.