The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Apr. 04, 2011
Stephan Kronholz, Dresden, DE;
Matthias Kessler, Dresden, DE;
Thomas Feudel, Radebeul, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A reduction in material loss of trench isolation structures prior to forming a strain-inducing semiconductor alloy in transistor elements may result in superior device uniformity, for instance with respect to drive current and threshold voltage. To this end, at least one etch process using diluted hydrofluoric acid may be omitted when forming the shallow trench isolations, while at the same time providing a high degree of compatibility with conventional process strategies.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile