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For the Inventor, By the Inventor

Dresden, Germany

Matthias Kessler

USPTO Granted Patents = 13 

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 30(Granted Patents)


Company Filing History:

goldMedal13 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2012-2016

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13 patents (USPTO):
1. 9425194 - Transistor devices with high-k insulation layers (2016-08-23),
2. 9287211 - Semiconductor device comprising metal-based eFuses of enhanced programming efficiency by enhancing heat generation (2016-03-15),
3. 9219013 - Technique for manufacturing semiconductor devices comprising transistors with different threshold voltages (2015-12-22),
4. 9165840 - Semiconductor structure including a semiconductor-on-insulator region and a bulk region, and method for the formation thereof (2015-10-20),
5. 9136177 - Methods of forming transistor devices with high-k insulation layers and the resulting devices (2015-09-15),
6. 8963208 - Semiconductor structure including a semiconductor-on-insulator region and a bulk region, and method for the formation thereof (2015-02-24),
7. 8846467 - Silicidation of semiconductor devices (2014-09-30),
8. 8642420 - Fabrication of a semiconductor device with extended epitaxial semiconductor regions (2014-02-04),
9. 8623742 - Reduced STI loss for superior surface planarity of embedded stressors in densely packed semiconductor devices (2014-01-07),
10. 8497180 - Transistor with boot shaped source/drain regions (2013-07-30),
11. 8460980 - Transistor comprising an embedded semiconductor alloy in drain and source regions extending under the gate electrode (2013-06-11),
12. 8334185 - Early embedded silicon germanium with insitu boron doping and oxide/nitride proximity spacer (2012-12-18),
13. 8258053 - Performance enhancement in transistors comprising high-K metal gate stack by reducing a width of offset spacers (2012-09-04),

Title: Matthias Kessler: Innovator in Semiconductor Technology

Introduction

Matthias Kessler is a prominent inventor based in Dresden, Germany, known for his significant contributions to semiconductor technology. With a total of 13 patents to his name, Kessler has made remarkable advancements in the field, particularly in the development of transistor devices and electronic fuses.

Latest Patents

Kessler's latest patents include innovative designs for transistor devices featuring high-k insulation layers. One of his notable inventions involves an integrated circuit product that incorporates first and second transistors positioned in and above active regions. The first transistor is characterized by a specific gate length and a gate material stack that includes a high-k insulating material. Similarly, the second transistor is designed with its own unique specifications, enhancing the overall performance of the integrated circuit.

Another significant patent focuses on semiconductor devices that utilize metal-based electronic fuses (eFuses) with enhanced programming efficiency. This invention introduces a sophisticated two-dimensional configuration of the metal line, which improves thermal conditions and results in a more pronounced electromigration effect. This advancement allows for a reduction in the size of the electronic fuse and the width of the corresponding transistors, optimizing the device's functionality.

Career Highlights

Kessler is currently employed at GlobalFoundries Inc., a leading semiconductor manufacturer. His work at the company has positioned him as a key player in the development of cutting-edge technologies that drive the industry forward. His expertise in semiconductor design and innovation has earned him recognition among his peers.

Collaborations

Throughout his career, Kessler has collaborated with notable colleagues, including Stefan Flachowsky and Stephan Kronholz. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Matthias Kessler's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to shape the future of electronic devices and systems.

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