The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Sep. 09, 2013
Globalfoundries Inc., Grand Cayman, KY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method for performing silicidation of a gate electrode is provided that includes forming both a first transistor with a first gate electrode covered by a cap layer and a semiconductor device on the same semiconductor substrate, forming an organic planarization layer (OPL) on the first transistor and the semiconductor device, back etching the OPL such that an upper surface of the OPL is positioned at a level that is below a level of an upper surface of the cap layer, forming a mask layer covering the semiconductor device without covering the first transistor, removing the cap layer while the back-etched OPL and the mask layer are present, and performing silicidation of the first gate electrode.