Roman Boschke

USPTO Granted Patents = 33 (Patent Applications = 7)

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 59(Granted Patents)

Location History:

Dresden, DE (2009 - 2016)
Dresdan, DE (2017)

Company Filing History:

Advanced Micro Devices Corporation

patents

Years Active: 2009-2017

where 'Filed Patents' based on already Granted Patents

33 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9659928 - Semiconductor device having a high-K gate dielectric above an STI region (2017-05-23),

2. 9515155 - E-fuse design for high-K metal-gate technology (2016-12-06),

3. 9450073 - SOI transistor having drain and source regions of reduced length and a stressed dielectric material adjacent thereto (2016-09-20),

4. 9431508 - Simplified gate-first HKMG manufacturing flow (2016-08-30),

5. 9236440 - Sandwich silicidation for fully silicided gate formation (2016-01-12),

6. 9117929 - Method for forming a strained transistor by stress memorization based on a stressed implantation mask (2015-08-25),

7. 9023712 - Method for self-aligned removal of a high-K gate dielectric above an STI region (2015-05-05),

8. 9006835 - Transistor with embedded Si/Ge material having reduced offset and superior uniformity (2015-04-14),

9. 8962420 - Semiconductor device comprising a buried poly resistor (2015-02-24),

10. 8939765 - Reduction of defect rates in PFET transistors comprising a Si/Ge semiconductor material formed by epitaxial growth (2015-01-27),

11. 8846467 - Silicidation of semiconductor devices (2014-09-30),

12. 8735241 - Semiconductor device structure and methods for forming a CMOS integrated circuit structure (2014-05-27),

13. 8722486 - Enhancing deposition uniformity of a channel semiconductor alloy by forming a recess prior to the well implantation (2014-05-13),

14. 8697584 - Enhanced transistor performance of N-channel transistors by using an additional layer above a dual stress liner in a semiconductor device (2014-04-15),

15. 8664049 - Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ doped semiconductor material (2014-03-04),

Title: Inventor Roman Boschke - Revolutionizing Technology in Dresden

Introduction: Roman Boschke is a visionary inventor based in Dresden, Germany, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Roman Boschke holds several patents in the areas of renewable energy, artificial intelligence, and sustainable transportation, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a career spanning over two decades, Roman Boschke has worked with leading research institutions and technology companies to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Roman Boschke has collaborated with top engineers, scientists, and researchers to bring his innovative ideas to life, leading to successful partnerships and groundbreaking inventions.

Conclusion: Roman Boschke's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a pioneering inventor in Dresden and beyond, leaving a lasting impact on the world of technology.

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7 patents pending:

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