The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Nov. 08, 2013
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Stephan Kronholz, Dresden, DE;

Peter Javorka, Radeburg, DE;

Roman Boschke, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 29/665 (2013.01); H01L 29/66636 (2013.01); H01L 29/7834 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device includes a first transistor positioned in and above a first semiconductor region, the first semiconductor region having a first upper surface and including a first semiconductor material. The semiconductor device further includes first raised drain and source portions positioned on the first upper surface of the first semiconductor region, the first drain and source portions including a second semiconductor material having a different material composition from the first semiconductor material. Additionally, the semiconductor device includes a second transistor positioned in and above a second semiconductor region, the second semiconductor region including the first semiconductor material. Finally, the semiconductor device also includes strain-inducing regions embedded in the second semiconductor region, the embedded strain-inducing regions including the second semiconductor material.


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