The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Mar. 11, 2015
Applicant:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Inventors:
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 27/088 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/76224 (2013.01); H01L 21/82345 (2013.01); H01L 21/823481 (2013.01); H01L 21/823842 (2013.01); H01L 21/823878 (2013.01); H01L 23/528 (2013.01); H01L 23/53271 (2013.01); H01L 29/0653 (2013.01); H01L 29/1079 (2013.01); H01L 29/4238 (2013.01); H01L 2924/0002 (2013.01); Y10S 438/959 (2013.01); Y10S 438/975 (2013.01);
Abstract
By forming a trench isolation structure after providing a high-k dielectric layer stack, direct contact of oxygen-containing insulating material of a top surface of the trench isolation structure with the high-k dielectric material in shared polylines may be avoided. This technique is self-aligned, thereby enabling further device scaling without requiring very tight lithography tolerances. After forming the trench isolation structure, the desired electrical connection across the trench isolation structure may be re-established by providing a further conductive material.