The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Dec. 10, 2010
Stephan Kronholz, Dresden, DE;
Peter Javorka, Radeburg, DE;
Maciej Wiatr, Dresden, DE;
Roman Boschke, Dresden, DE;
Christian Krueger, Liegau-Augustusbad, DE;
Stephan Kronholz, Dresden, DE;
Peter Javorka, Radeburg, DE;
Maciej Wiatr, Dresden, DE;
Roman Boschke, Dresden, DE;
Christian Krueger, Liegau-Augustusbad, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
In sophisticated semiconductor devices, the defect rate that may typically be associated with the provision of a silicon/germanium material in the active region of P-channel transistors may be significantly decreased by incorporating a carbon species prior to or during the selective epitaxial growth of the silicon/germanium material. In some embodiments, the carbon species may be incorporated during the selective growth process, while in other cases an ion implantation process may be used. In this case, superior strain conditions may also be obtained in N-channel transistors.