Maciej Wiatr

This inventor holds 36 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Technology. Top assignees: Globalfoundries Inc., Advanced Micro Devices Corporation. Active years: 2010-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Maciej Wiatr. Retrieved from https://idiyas.com/inventor/maciej-wiatr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 36 (Patent Applications = 9)

% Patents Active = 58.3

Average Co-Inventor Count = 3.2

ph-index = 7

Forward Citations = 117(Granted Patents)

Company Filing History:

Advanced Micro Devices Corporation

patents

Years Active: 2010-2017

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Areas of Expertise:

Semiconductor Structure

Transistor

Strain Engineering

High-K Metal Gate

Defect Reduction

Thin-Film Resistor

E-Fuse Design

Channel Semiconductor Alloy

PMOS Transistors

Embedded Strain-Inducing

Silicon/Germanium

Field Effect Transistors

36 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9812573 - Semiconductor structure including a transistor having stress creating regions and method for the formation thereof (2017-11-07),

2. 9627409 - Semiconductor device with thin-film resistor (2017-04-18),

3. 9515155 - E-fuse design for high-K metal-gate technology (2016-12-06),

4. 9263582 - Strain engineering in semiconductor devices by using a piezoelectric material (2016-02-16),

5. 9153534 - Semiconductor fuse with enhanced post-programming resistance (2015-10-06),

6. 8939765 - Reduction of defect rates in PFET transistors comprising a Si/Ge semiconductor material formed by epitaxial growth (2015-01-27),

7. 8884379 - Strain engineering in semiconductor devices by using a piezoelectric material (2014-11-11),

8. 8836047 - Reducing defect rate during deposition of a channel semiconductor alloy into an in situ recessed active region (2014-09-16),

9. 8778772 - Method of forming transistor with increased gate width (2014-07-15),

10. 8748275 - Semiconductor devices comprising a channel semiconductor alloy formed with reduced STI topography (2014-06-10),

11. 8722486 - Enhancing deposition uniformity of a channel semiconductor alloy by forming a recess prior to the well implantation (2014-05-13),

12. 8722481 - Superior integrity of high-k metal gate stacks by preserving a resist material above end caps of gate electrode structures (2014-05-13),

13. 8709902 - Sacrificial spacer approach for differential source/drain implantation spacers in transistors comprising a high-k metal gate electrode structure (2014-04-29),

14. 8673668 - Test structure for controlling the incorporation of semiconductor alloys in transistors comprising high-k metal gate electrode structures (2014-03-18),

15. 8664049 - Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ doped semiconductor material (2014-03-04),

Title: The Innovative Journey of Maciej Wiatr: A Pioneer in Semiconductor Technologies

Introduction: Maciej Wiatr, based in Dresden, Germany, is a remarkable inventor with a notable portfolio of 36 patents. His contributions to semiconductor technology highlight his expertise and innovative spirit in the field. Wiatr's work has had a significant impact on the development of advanced semiconductor structures and devices.

Latest Patents: Two of Maciej Wiatr's latest patents exemplify his cutting-edge work. The first patent details a semiconductor structure that includes a transistor featuring stress-creating regions and outlines a novel method for its formation. This method involves several etching processes that create unique features in the semiconductor material, ultimately enhancing device performance. The second patent focuses on a semiconductor device that incorporates a thin-film resistor, showcasing his ability to integrate various materials effectively to achieve optimal functionality in semiconductor devices.

Career Highlights: Throughout his career, Maciej Wiatr has worked in prominent companies such as Globalfoundries Inc. and Advanced Micro Devices Corporation. His role in these organizations has allowed him to contribute to significant advancements in semiconductor technology, strengthening his reputation as a leading inventor in the field.

Collaborations: Wiatr has collaborated with several talented individuals, including Peter Javorka and Stephan Kronholz. These collaborations have fostered a creative environment, allowing for the exchange of ideas and the development of innovative solutions in semiconductor technology.

Conclusion: Maciej Wiatr is a distinguished inventor whose 36 patents reflect his dedication to advancing semiconductor technology. His latest innovations and collaborations illustrate his commitment to excellence and underline the importance of teamwork in driving industry progress. His work continues to inspire future advancements, making a lasting impact on the field of electronics.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

9 patents pending: