The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Mar. 15, 2012
Applicants:
Stephan-detlef Kronholz, Dresden, DE;
Peter Javorka, Radeburg, DE;
Maciej Wiatr, Dresden, DE;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/04 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/84 (2013.01); H01L 21/823807 (2013.01); H01L 21/823481 (2013.01); H01L 21/823412 (2013.01); H01L 21/76283 (2013.01); H01L 21/823878 (2013.01); H01L 27/1203 (2013.01);
Abstract
When forming sophisticated high-k metal gate electrode structures on the basis of a threshold voltage adjusting semiconductor alloy, a highly efficient in situ process technique may be applied in order to form a recess in dedicated active regions and refilling the recess with a semiconductor alloy. In order to reduce or avoid etch-related irregularities during the recessing of the active regions, the degree of aluminum contamination during the previous processing, in particular during the formation of the trench isolation regions, may be controlled.