The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Jul. 28, 2011
Thilo Scheiper, Dresden, DE;
Kerstin Ruttloff, Hainichen, DE;
Maciej Wiatr, Dresden, DE;
Stefan Flachowsky, Dresden, DE;
Thilo Scheiper, Dresden, DE;
Kerstin Ruttloff, Hainichen, DE;
Maciej Wiatr, Dresden, DE;
Stefan Flachowsky, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
In complex semiconductor devices, the profiling of the deep drain and source regions may be accomplished individually for N-channel transistors and P-channel transistors without requiring any additional process steps by using a sacrificial spacer element as an etch mask and as an implantation mask for incorporating the drain and source dopant species for deep drain and source areas for one type of transistor. On the other hand, the usual main spacer may be used for the incorporation of the deep drain and source regions of the other type of transistor.