The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2014

Filed:

Nov. 17, 2009
Applicants:

Sven Beyer, Dresden, DE;

Patrick Press, Dresden, DE;

Rainer Giedigkeit, Dresden, DE;

Jan Hoentschel, Dresden, DE;

Inventors:

Sven Beyer, Dresden, DE;

Patrick Press, Dresden, DE;

Rainer Giedigkeit, Dresden, DE;

Jan Hoentschel, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/78 (2006.01); H01L 29/772 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01);
Abstract

In a multiple gate transistor, the plurality of Fins of the drain or source of the transistor are electrically connected to each other by means of a common contact element, wherein enhanced uniformity of the corresponding contact regions may be accomplished by an enhanced silicidation process sequence. For this purpose, the Fins may be embedded into a dielectric material in which an appropriate contact opening may be formed to expose end faces of the Fins, which may then act as silicidation surface areas.


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