The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
May. 27, 2009
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Patrick Press, Dresden, DE;
Karsten Wieczorek, Dresden, DE;
Kerstin Ruttloff, Hainichen, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Patrick Press, Dresden, DE;
Karsten Wieczorek, Dresden, DE;
Kerstin Ruttloff, Hainichen, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
In a memory cell, the drive current capabilities of the transistors may be adjusted by locally providing an increased gate dielectric thickness and/or gate length of one or more of the transistors of the memory cell. That is, the gate length and/or the gate dielectric thickness may vary along the transistor width direction, thereby providing an efficient mechanism for adjusting the effective drive current capability while at the same time allowing the usage of a simplified geometry of the active region, which may result in enhanced production yield due to enhanced process uniformity. In particular, the probability of creating short circuits caused by nickel silicide portions may be reduced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile