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For the Inventor, By the Inventor

Dresden, Germany

Berthold Reimer

USPTO Granted Patents = 15 

Average Co-Inventor Count = 3.4

ph-index = 4

Forward Citations = 50(Granted Patents)


Company Filing History:

goldMedal15 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2011-2020

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15 patents (USPTO):
1. 10559593 - Field-effect transistors with a grown silicon-germanium channel (2020-02-11),
2. 9842762 - Method of manufacturing a semiconductor wafer having an SOI configuration (2017-12-12),
3. 9054041 - Methods for etching dielectric materials in the fabrication of integrated circuits (2015-06-09),
4. 8951901 - Superior integrity of a high-K gate stack by forming a controlled undercut on the basis of a wet chemistry (2015-02-10),
5. 8815674 - Methods of forming a semiconductor device by performing a wet acid etching process while preventing or reducing loss of active area and/or isolation regions (2014-08-26),
6. 8716136 - Method of forming a semiconductor structure including a wet etch process for removing silicon nitride (2014-05-06),
7. 8703620 - Methods for PFET fabrication using APM solutions (2014-04-22),
8. 8658543 - Methods for pFET fabrication using APM solutions (2014-02-25),
9. 8580133 - Methods of controlling the etching of silicon nitride relative to silicon dioxide (2013-11-12),
10. 8524591 - Maintaining integrity of a high-K gate stack by passivation using an oxygen plasma (2013-09-03),
11. 8445344 - Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning (2013-05-21),
12. 8357575 - Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers (2013-01-22),
13. 8283232 - Enhanced etch stop capability during patterning of silicon nitride including layer stacks by providing a chemically formed oxide layer during semiconductor processing (2012-10-09),
14. 8247281 - Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers (2012-08-21),
15. 8048748 - Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device (2011-11-01),

Title: Innovative Contributions of Berthold Reimer in Field-Effect Transistor Technology

Introduction

Berthold Reimer, a prominent inventor hailing from Dresden, Germany, has made significant contributions to the field of semiconductor technology. With a total of 15 patents to his name, he is recognized for his innovative approach to field-effect transistors (FETs) and has been a key player in advancing the efficiency and capability of semiconductor devices.

Latest Patents

Among his latest inventions are groundbreaking patents focusing on field-effect transistors with a grown silicon-germanium channel. These patents detail structures and methods for forming a field-effect transistor that improves performance and functionality. One patent outlines the formation of a first channel region containing a first semiconductor material and a second channel region with a second semiconductor material, strategically designed over a buried insulating layer of a silicon-on-insulator substrate. Furthermore, the invention details the configuration of gate electrodes over the respective channel regions, where the first semiconductor material has a specific germanium concentration, and the second is higher, enhancing the overall conductivity and efficiency.

Additionally, another patent by Reimer discusses a method of manufacturing a semiconductor wafer with a semiconductor-on-insulator (SOI) configuration. This methodology includes multiple oxidization processes to refine the semiconductor layer for optimal performance, underscoring his innovative techniques in semiconductor production.

Career Highlights

Berthold Reimer is currently employed at GlobalFoundries Inc., a leader in semiconductor manufacturing that plays a pivotal role in bringing innovative technologies to the market. Through his tenure, Reimer has consistently pushed the boundaries of semiconductor development, contributing valuable insights and advancements that benefit numerous applications across various industries.

Collaborations

In his research and development endeavors, Reimer has collaborated with esteemed colleagues such as Sven Beyer and Richard Carter. Their collective expertise and innovative spirit have contributed to the successful development of advanced semiconductor technologies, solidifying their positions as thought leaders in the industry.

Conclusion

Berthold Reimer's innovative contributions and prolific patent portfolio reflect a commitment to excellence in semiconductor technology. His work not only advances the field of field-effect transistors but also sets the stage for future innovations that will continue to impact the electronics industry positively. As technology evolves, inventors like Reimer remain at the forefront, driving progress and shaping the future of semiconductor applications.

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