The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Aug. 01, 2012
Joanna Wasyluk, Dresden, DE;
Stephan Kronholz, Dresden, DE;
Berthold Reimer, Dresden, DE;
Sven Metzger, Dresden, DE;
Gregory Nowling, San Jose, CA (US);
John Foster, Mountain View, CA (US);
Paul Besser, Sunnyvale, CA (US);
Joanna Wasyluk, Dresden, DE;
Stephan Kronholz, Dresden, DE;
Berthold Reimer, Dresden, DE;
Sven Metzger, Dresden, DE;
Gregory Nowling, San Jose, CA (US);
John Foster, Mountain View, CA (US);
Paul Besser, Sunnyvale, CA (US);
GLOBALFOUNDRIES, Inc., Grand Cayman, KY;
Abstract
A method for fabricating an integrated circuit from a semiconductor substrate having formed thereon over a first portion of the semiconductor substrate a hard mask layer and having formed thereon over a second portion of the semiconductor substrate an oxide layer. The first portion and the second portion are electrically isolated by a shallow trench isolation feature. The method includes removing the oxide layer from over the second portion and recessing the surface region of the second portion by applying an ammonia-hydrogen peroxide-water (APM) solution to form a recessed surface region. The APM solution is provided in a concentration of ammonium to hydrogen peroxide ranging from about 1:1 to about 1:0.001 and in a concentration of ammonium to water ranging from about 1:1 to about 1:20. The method further includes epitaxially growing a silicon-germanium (SiGe) layer on the recessed surface region.