The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
May. 26, 2010
Richard Carter, Dresden, DE;
Falk Graetsch, Dresden, DE;
Martin Trentzsch, Dresden, DE;
Sven Beyer, Dresden, DE;
Berthold Reimer, Dresden, DE;
Robert Binder, Dresden, DE;
Boris Bayha, Dresden, DE;
Richard Carter, Dresden, DE;
Falk Graetsch, Dresden, DE;
Martin Trentzsch, Dresden, DE;
Sven Beyer, Dresden, DE;
Berthold Reimer, Dresden, DE;
Robert Binder, Dresden, DE;
Boris Bayha, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Sophisticated gate electrode structures for N-channel transistors and P-channel transistors are patterned on the basis of substantially the same configuration while, nevertheless, the work function adjustment may be accomplished in an early manufacturing stage. For this purpose, diffusion layer and cap layer materials are removed after incorporating the desired work function metal species into the high-k dielectric material and subsequently a common gate layer stack is deposited and subsequently patterned.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile