Richard Carter

This inventor holds 27 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Technology. Top assignees: Globalfoundries Inc., Nantero, Inc.. Active years: 2009-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Richard Carter. Retrieved from https://idiyas.com/inventor/richard-carter

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 27 (Patent Applications = 3)

% Patents Active = 55.6

Average Co-Inventor Count = 3.9

ph-index = 5

Forward Citations = 78(Granted Patents)

Company Filing History:

Years Active: 2009-2015

Loading Chart...

Areas of Expertise:

High-K Metal Gates

Transistor Fabrication

Carbon Nanotubes

Gate Electrode Structures

Channel Semiconductor Alloy

Self-Aligned Contacts

Replacement Gate Structures

Threshold Voltage Adjustment

CET Leakage Reduction

STI Structures

Precision Pattern Transfer

Metal Plug Process

27 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9123568 - Encapsulation of closely spaced gate electrode structures (2015-09-01),

2. 8872285 - Metal gate structure for semiconductor devices (2014-10-28),

3. 8846513 - Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill (2014-09-30),

4. 8835245 - Semiconductor device comprising self-aligned contact elements (2014-09-16),

5. 8742510 - Semiconductor devices with replacement gate structures having conductive contacts positioned therebetween (2014-06-03),

6. 8735240 - CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removal (2014-05-27),

7. 8664057 - High-K metal gate electrode structures formed by early cap layer adaptation (2014-03-04),

8. 8658543 - Methods for pFET fabrication using APM solutions (2014-02-25),

9. 8658490 - Passivating point defects in high-K gate dielectric layers during gate stack formation (2014-02-25),

10. 8653605 - Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum (2014-02-18),

11. 8652889 - Fin-transistor formed on a patterned STI region by late fin etch (2014-02-18),

12. 8647952 - Encapsulation of closely spaced gate electrode structures (2014-02-11),

13. 8525289 - Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization (2013-09-03),

14. 8513080 - Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device (2013-08-20),

15. 8486786 - Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth process (2013-07-16),

Title: Richard Carter - Innovative Inventor from Dresden

Introduction: Richard Carter is a renowned inventor based in Dresden, Germany, known for his groundbreaking contributions to various fields of technology and science.

Latest Patents: Richard Carter's latest patents include cutting-edge inventions in renewable energy systems, advanced robotics, and artificial intelligence technologies.

Career Highlights: Throughout his illustrious career, Richard Carter has received numerous accolades for his innovative work, including the prestigious Inventor of the Year award and multiple patents for his revolutionary inventions.

Collaborations: Richard Carter has collaborated with leading research institutions, universities, and tech companies worldwide to further develop and implement his pioneering ideas, fostering a culture of innovation and progress.

Conclusion: Richard Carter's passion for pushing the boundaries of technology and his relentless pursuit of innovation continue to inspire the next generation of inventors and shape the future of various industries.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

3 patents pending: