The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Apr. 12, 2012
Richard Carter, Dresden, DE;
Martin Trentzsch, Dresden, DE;
Sven Beyer, Dresden, DE;
Rohit Pal, Fishkill, NY (US);
Richard Carter, Dresden, DE;
Martin Trentzsch, Dresden, DE;
Sven Beyer, Dresden, DE;
Rohit Pal, Fishkill, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Sophisticated gate electrode structures may be formed by providing a cap layer including a desired species that may diffuse into the gate dielectric material prior to performing a treatment for stabilizing the sensitive gate dielectric material. In this manner, complex high-k metal gate electrode structures may be formed on the basis of reduced temperatures and doses for a threshold adjusting species compared to conventional strategies. Moreover, a single metal-containing electrode material may be deposited for both types of transistors.