The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Nov. 30, 2012
Richard Carter, Dresden, DE;
Sven Beyer, Dresden, DE;
Joachim Metzger, Butzbach, DE;
Robert Binder, Dresden, DE;
Richard Carter, Dresden, DE;
Sven Beyer, Dresden, DE;
Joachim Metzger, Butzbach, DE;
Robert Binder, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor.