For the Inventor, By the Inventor

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Woburn, MA, United States of America

Nantero, Inc.

USPTO Granted Patents = 258

% Expired Patents = 22.9

CIPO Patents = 5

EPO Patents = 16

Trademarks = 5

Forward Citations = 4,795

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79 inventors (with patents filed for the assignee):

Thomas Rueckes (177 out of 186 patents)

Claude Louis Bertin (150 out of 300 patents)

Brent M Segal (116 out of 119 patents)

4. Darren K Brock (40 out of 41 patents)

5. Jonathan Wesley Ward (38 out of 56 patents)

6. Ramesh Sivarajan (34 out of 57 patents)

7. Rahul Sen (29 out of 33 patents)

8. Mitchell Meinhold (27 out of 28 patents)

9. X M Henry Huang (26 out of 27 patents)

10. Venkatachalam C Jaiprakash (26 out of 39 patents)

11. Steven L Konsek (22 out of 22 patents)

12. Eliodor G Ghenciu (22 out of 33 patents)

13. H Montgomery Manning (21 out of 141 patents)

14. Frank Guo (15 out of 21 patents)

15. Bernhard Vogeli (14 out of 15 patents)

Core Competencies:

Resistive Change Elements

3D Memory Architectures

Nonvolatile Nanotube Switches

Carbon Nanotubes

Memory Cells

Electrostatic Discharge Protection

Cross Point Arrays

Nanotube Fabrics

Logic Elements

Programming Methods

Error Correction

Nanoscopic Devices

258 patents: Sort by Forward Citations

1. 12176028 - Resistive change element arrays (2024-12-24),

2. 12068029 - Three dimensional (3D) memories with multiple resistive change elements per cell and corresponding architectures for in-memory computing (2024-08-20),

3. 11972830 - Methods for accessing resistive change elements operable as antifuses (2024-04-30),

4. 11923003 - Resistive change element arrays (2024-03-05),

5. 11817171 - Devices for providing neutral voltage conditions for resistive change elements in resistive change element arrays (2023-11-14),

6. 11798623 - Three dimensional (3D) memories with multiple resistive change elements per cell and corresponding architectures (2023-10-24),

7. 11462686 - Three-dimensional array architecture for resistive change element arrays and methods for making same (2022-10-04),

8. 11393508 - Methods for accessing resistive change elements in resistive change element arrays (2022-07-19),

9. 11387277 - Electrostatic discharge protection devices using carbon-based diodes (2022-07-12),

10. 11295810 - Combinational resistive change elements (2022-04-05),

11. 11258023 - Resistive change elements using passivating interface gaps and methods for making same (2022-02-22),

12. 11177261 - Nonvolatile nanotube switch elements using sidewall contacts (2021-11-16),

13. 11145337 - Sense amplifiers (2021-10-12),

14. 11117289 - Storage and delivery systems for colloidal dispersions (2021-09-14),

15. 11072714 - Nanotube solution treated with molecular additive, nanotube film having enhanced adhesion property, and methods for forming the nanotube solution and the nanotube film (2021-07-27),

Nantero is a high-tech company that develops and licenses next-generation memory technologies. Their flagship product is NRAM (non-volatile random-access memory), which combines the high-speed access of traditional DRAM with the non-volatility of flash memory. NRAM offers superior performance, endurance, and reliability compared to existing memory technologies, making it ideal for applications such as data storage, artificial intelligence, and Internet of Things (IoT). Nantero's groundbreaking approach to memory storage has garnered significant attention in the semiconductor industry and positioned them as a pioneer in the future of memory solutions.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 22 2026

258 Patents

#1 in Woburn, MA

#99 in Massachusetts

#1,667 in US

#3,382 in the World

Woburn, MA, United States of America

Nantero, Inc.

Forward Citations = 4,795

79 inventors:

Thomas Rueckes (177 out of 186 patents)

Claude Louis Bertin (150 out of 300 patents)

Brent M Segal (116 out of 119 patents)

4. Darren K Brock (40 out of 41 patents)

5. Jonathan Wesley Ward (38 out of 56 patents)

Please report any incorrect information to [email protected]

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