The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Aug. 05, 2020
Applicants:

Nantero, Inc., Woburn, MA (US);

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Mark Ramsbey, Sunnyvale, CA (US);

Thomas Rueckes, Byfield, MA (US);

Tatsuya Yamaguchi, Yamanashi, JP;

Syuji Nozawa, Yamanashi, JP;

Nagisa Sato, Tokyo, JP;

Assignee:

Nantero, Inc., Woburn, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/764 (2006.01); H01L 51/10 (2006.01); H01L 51/00 (2006.01); H01L 27/28 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/107 (2013.01); H01L 27/285 (2013.01); H01L 51/0003 (2013.01); H01L 51/0017 (2013.01); H01L 51/0048 (2013.01); H01L 51/0591 (2013.01);
Abstract

A method to fabricate a resistive change element. The method may include forming a stack over a substrate. The stack may include a conductive material, a resistive change material, a first surface, and a second surfaces opposite the first surface. The method may further include depositing a first material over the stack such that the first material directly contacts at least one of the first surface and the second surface of the stack. The method may also include after depositing the first material, forming a second material over the first material and evaporating a portion of the first material through the second material to create a gap between the second material and the at least one of the first surface and the second surface of the stack.


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