Nagisa Sato

Title: The Innovative Contributions of Nagisa Sato

Introduction

Nagisa Sato is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of semiconductor technology, holding a total of seven patents. Her work focuses on advanced etching methods and semiconductor device manufacturing processes.

Latest Patents

One of her latest patents is an etching method and etching apparatus. This method involves a physical adsorption process that adsorbs an adsorbate based on a first processing gas on a film to be etched. This process occurs under conditions where the pressure of the first processing gas is smaller than its saturated vapor pressure relative to the temperature of the object being processed. The object is cooled while the film is etched by reacting the adsorbate with the film through a plasma of a second processing gas. Another notable patent is a semiconductor device manufacturing method and substrate processing apparatus. This method includes burying a void formed in a substrate with a polymer that has a urea bond, forming an oxide film on the substrate, and desorbing a depolymerized polymer from the void through the oxide film.

Career Highlights

Nagisa has worked with notable companies such as Tokyo Electron Limited and Université d'Orléans. Her experience in these organizations has allowed her to develop and refine her innovative techniques in semiconductor manufacturing.

Collaborations

She has collaborated with esteemed colleagues, including Tatsuya Yamaguchi and Syuji Nozawa, contributing to various projects that advance semiconductor technology.

Conclusion

Nagisa Sato's innovative work in etching methods and semiconductor device manufacturing has made her a key figure in her field. Her contributions continue to influence the development of advanced technologies in the semiconductor industry.