The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Dec. 10, 2021
Tokyo Electron Limited, Tokyo, JP;
Universite D'orleans, Orleans, FR;
Shigeru Tahara, Miyagi, JP;
Jacques Faguet, Austin, TX (US);
Kaoru Maekawa, Albany, NY (US);
Kumiko Ono, Tokyo, JP;
Nagisa Sato, Tokyo, JP;
Remi Dussart, Saint-Pryve Saint-Mesmin, FR;
Thomas Tillocher, Orleans, FR;
Philippe Lefaucheux, Mareau-aux-pres, FR;
Gaëlle Antoun, Dardilly, FR;
Tokyo Electron Limited, Tokyo, JP;
UNIVERSITE D'ORLEANS, Orleans, FR;
Abstract
An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that the pressure of the first processing gas is smaller than the saturated vapor pressure of the first processing gas with respect to a temperature of an object to be processed while cooling the object to be processed on which the film to be etched is formed; and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.