Tokyo Electron Limited

Université D'orleans

Nantero, Inc.

Nagisa Sato

Tatsuya Yamaguchi

Syuji Nozawa

Shigeru Tahara

Jacques Faguet

Kaoru Maekawa

Kumiko Ono

Sunghil Lee

Remi Dussart

Thomas Tillocher

Philippe Lefaucheux

Gaëlle Antoun

Thomas Rueckes

Mark T Ramsbey

Koichi Yatsuda

An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that the pressure of the first processing gas is smaller than the saturated vapor pressure of the first processing gas with respect to a temperature of an object to be processed while cooling the object to be processed on which the film to be etched is formed; and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.

Etching method and etching apparatus

A semiconductor device manufacturing method includes burying a void formed in a substrate with a polymer having a urea bond; forming an oxide film on the substrate; and desorbing a depolymerized polymer obtained by depolymerizing the polymer from the void through the oxide film.

Semiconductor device manufacturing method and substrate processing apparatus

A method to fabricate a resistive change element. The method may include forming a stack over a substrate. The stack may include a conductive material, a resistive change material, a first surface, and a second surfaces opposite the first surface. The method may further include depositing a first material over the stack such that the first material directly contacts at least one of the first surface and the second surface of the stack. The method may also include after depositing the first material, forming a second material over the first material and evaporating a portion of the first material through the second material to create a gap between the second material and the at least one of the first surface and the second surface of the stack.

Resistive change elements using passivating interface gaps and methods for making same

A method of manufacturing a semiconductor memory includes: forming a first lamination on a substrate; forming a first hole through the first lamination; embedding a first sacrificial material including a thermally decomposable organic material in the first hole; forming a recess at an upper portion of the first hole; forming an oxide film in the recess; removing the first sacrificial material under the oxide film; embedding a second sacrificial material on the oxide film in the recess; forming a second lamination on the first lamination and the second sacrificial material; forming a second hole through the second lamination at a position corresponding to the first hole by etching the second lamination in an extension direction of the first hole; and removing the oxide film and the second sacrificial material.

Method of manufacturing semiconductor memory

A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.

Plasma etching method

There is provided a method of manufacturing a device, which comprises: a preparation step of preparing a workpiece having a recess formed therein; a burying step of burying a sacrificial material composed of a thermally decomposable organic material in the recess; a lamination step of laminating a preliminary sealing film on the sacrificial material buried in the recess; a first removal step of removing the sacrificial material in the recess through the preliminary sealing film, by annealing the workpiece at a first temperature and thermally decomposing the sacrificial material; a processing step of performing a predetermined process on a portion other than the recess in the workpiece, in a state in which the recess is covered with the preliminary sealing film; and a second removal step of removing the preliminary sealing film.

Device manufacturing method

There is provided a method of manufacturing a semiconductor device, including: forming a polymer film, which is a film of a polymer having a urea bond generated by polymerization of plural types of monomers, around a plurality of structures provided on a substrate and including a first material; adjusting a shape of the polymer film; forming a temporary sealing film on the polymer film to cover the polymer film; and heating the polymer film to depolymerize the polymer into the plural types of monomers and desorb the plural types of depolymerized monomers through the temporary sealing film.

Growing community of inventors

Tokyo, Japan

Nagisa Sato