The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Dec. 11, 2018
Tokyo Electron Limited, Tokyo, JP;
Universite D'orleans, Orleans, FR;
Koichi Yatsuda, Tokyo, JP;
Kaoru Maekawa, Albany, NY (US);
Nagisa Sato, Tokyo, JP;
Kumiko Ono, Tokyo, JP;
Shigeru Tahara, Miyagi, JP;
Jacques Faguet, Austin, TX (US);
Remi Dussart, Saint-Mesmin, FR;
Thomas Tillocher, Orleans, FR;
Philippe Lefaucheux, Mareau-aux-pres, FR;
Gaëlle Antoun, Dardilly, FR;
TOKYO ELECTRON LIMITED, Tokyo, JP;
UNIVERSITE D'ORLEANS, Orleans, FR;
Abstract
A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.