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For the Inventor, By the Inventor

Cupertino, CA, United States of America

X M Henry Huang

USPTO Granted Patents = 27


Average Co-Inventor Count = 5.7

ph-index = 8

Forward Citations = 469(Granted Patents)


Location History:

  • Woburn, MA (US) (2009 - 2015)
  • Cupertino, CA (US) (2010 - 2022)

Company Filing History:

goldMedal26 out of 258 
 
Nantero, Inc.
 patents
silverMedal1 out of 832,680 
Other
 patents

Years Active: 2009-2022

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27 patents (USPTO):
1. 11387277 - Electrostatic discharge protection devices using carbon-based diodes (2022-07-12),
2. 11177261 - Nonvolatile nanotube switch elements using sidewall contacts (2021-11-16),
3. 10854243 - Nonvolatile nanotube memory arrays using nonvolatile nanotube blocks and cell selection transistors (2020-12-01),
4. 10700131 - Non-linear resistive change memory cells and arrays (2020-06-30),
5. 10546859 - Double density nonvolatile nanotube switch memory cells (2020-01-28),
6. 10403683 - Methods for forming crosspoint arrays of resistive change memory cells (2019-09-03),
7. 10339982 - Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks (2019-07-02),
8. 10249684 - Resistive change elements incorporating carbon based diode select devices (2019-04-02),
9. 10096601 - Stacked three-dimensional arrays of two terminal nanotube switching devices (2018-10-09),
10. 9917139 - Resistive change element array using vertically oriented bit lines (2018-03-13),
11. 9911743 - Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same (2018-03-06),
12. 9783255 - Cross point arrays of 1-R nonvolatile resistive change memory cells using continuous nanotube fabrics (2017-10-10),
13. 9601498 - Two-terminal nanotube devices and systems and methods of making same (2017-03-21),
14. 9406349 - Memory elements and cross point switches and arrays for same using nonvolatile nanotube blocks (2016-08-02),
15. 9390790 - Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications (2016-07-12),

Title: The Innovative Journey of X M Henry Huang

Introduction: X M Henry Huang, a visionary inventor based in Cupertino, CA, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: X M Henry Huang's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, X M Henry Huang has established himself as a leading figure in the tech industry, having worked with renowned companies and research institutions to bring his ideas to life. His innovative solutions have revolutionized various sectors, earning him recognition as a pioneer in his field.

Collaborations: X M Henry Huang has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing. His partnerships have led to the development of groundbreaking technologies that have had a lasting impact on society.

Conclusion: In conclusion, X M Henry Huang's passion for innovation, coupled with his relentless drive to push the boundaries of what is possible, has solidified his reputation as a trailblazer in the world of technology. His continued dedication to creating solutions that address global challenges underscores his commitment to making a positive difference in the world.

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