The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2020

Filed:

Aug. 19, 2019
Applicant:

Nantero, Inc., Woburn, MA (US);

Inventors:

Claude L. Bertin, Venice, FL (US);

Thomas Rueckes, Byfield, MA (US);

X. M. Henry Huang, Cupertino, CA (US);

C. Rinn Cleavelin, Lubbock, TX (US);

Assignee:

Nantero, Inc., Woburn, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/28 (2006.01); G11C 13/00 (2006.01); H01L 51/00 (2006.01); H01L 45/00 (2006.01); H01L 51/05 (2006.01); H01L 27/24 (2006.01); H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/285 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01); H01L 29/02 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/149 (2013.01); H01L 45/165 (2013.01); H01L 45/1608 (2013.01); H01L 45/1675 (2013.01); H01L 51/0046 (2013.01); H01L 51/0048 (2013.01); H01L 51/0579 (2013.01); G11C 2213/35 (2013.01); G11C 2213/73 (2013.01);
Abstract

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.


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