1. Globalfoundries Inc. (15 from 5,671 patents)

1. 10559593 - Field-effect transistors with a grown silicon-germanium channel

2. 9842762 - Method of manufacturing a semiconductor wafer having an SOI configuration

3. 9054041 - Methods for etching dielectric materials in the fabrication of integrated circuits

4. 8951901 - Superior integrity of a high-K gate stack by forming a controlled undercut on the basis of a wet chemistry

5. 8815674 - Methods of forming a semiconductor device by performing a wet acid etching process while preventing or reducing loss of active area and/or isolation regions

6. 8716136 - Method of forming a semiconductor structure including a wet etch process for removing silicon nitride

7. 8703620 - Methods for PFET fabrication using APM solutions

8. 8658543 - Methods for pFET fabrication using APM solutions

9. 8580133 - Methods of controlling the etching of silicon nitride relative to silicon dioxide

10. 8524591 - Maintaining integrity of a high-K gate stack by passivation using an oxygen plasma

11. 8445344 - Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning

12. 8357575 - Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers

13. 8283232 - Enhanced etch stop capability during patterning of silicon nitride including layer stacks by providing a chemically formed oxide layer during semiconductor processing

14. 8247281 - Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers

15. 8048748 - Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device