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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10559593 B1

PDFFull Text
Date of Patent:
Feb. 11, 2020

Filed:

Aug. 13, 2018

Field-effect transistors with a grown silicon-germanium channel

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Carsten Metze, Dresden, DE;

Berthold Reimer, Dresden, DE;

Simeon Morvan, Dresden, DE;

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Thompson Hine LLP

Primary Examiner:

Scott B Geyer

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/321 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/0245 (2013.01); H01L 21/324 (2013.01); H01L 21/32105 (2013.01); H01L 21/7624 (2013.01); H01L 21/8234 (2013.01);
Abstract

Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A first channel region containing a first semiconductor material and a second channel region containing a second semiconductor material are formed over a buried insulating layer of a silicon-on-insulator substrate. A first gate electrode of a first field-effect transistor is formed over the first channel region. A second gate electrode of a second field-effect transistor is formed over the second channel region. The first semiconductor material of the first channel region has a first germanium concentration. The second semiconductor material of the second channel region has a second germanium concentration that is greater than the first germanium concentration in the first semiconductor material of the first channel region.

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