The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Nov. 11, 2016
Globalfoundries Inc., Grand Cayman, KY;
Berthold Reimer, Dresden, DE;
Boris Bayha, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
The present disclosure provides a method of manufacturing a semiconductor wafer having a semiconductor-on-insulator (SOI) configuration, the method including providing a semiconductor starting wafer, the semiconductor starting wafer having a base substrate, a semiconductor layer formed over the base substrate and a buried insulating material layer formed between the semiconductor substrate and the base substrate, exposing the semiconductor starting wafer to a first oxidization process, wherein an oxide surface region is formed by oxidizing an upper surface region of the semiconductor layer, thinning the oxide surface region, exposing the semiconductor starting wafer to a second oxidization process, wherein a thickness of the oxide surface region is locally increased, and removing the oxide surface region, wherein the semiconductor layer is exposed.