The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2014

Filed:

Feb. 15, 2012
Applicants:

Peter Baars, Dresden, DE;

Frank Jakubowski, Dresden, DE;

Jens Heinrich, Wachau, DE;

Marco Lepper, Dresden, DE;

Jana Schlott, Wachau, DE;

Kai Frohberg, Niederau, DE;

Inventors:

Peter Baars, Dresden, DE;

Frank Jakubowski, Dresden, DE;

Jens Heinrich, Wachau, DE;

Marco Lepper, Dresden, DE;

Jana Schlott, Wachau, DE;

Kai Frohberg, Niederau, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/425 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

When forming substrate diodes in SOI devices, superior diode characteristics may be preserved by providing an additional spacer element in the substrate opening and/or by using a superior contact patterning regime on the basis of a sacrificial fill material. In both cases, integrity of a metal silicide in the substrate diode may be preserved, thereby avoiding undue deviations from the desired ideal diode characteristics. In some illustrative embodiments, the superior diode characteristics may be achieved without requiring any additional lithography step.


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