The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Jul. 27, 2010
Thorsten Kammler, Ottendorf-Okrilla, DE;
Ralf Richter, Dresden, DE;
Markus Lenski, Dresden, DE;
Gunter Grasshoff, Radebeul, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Ralf Richter, Dresden, DE;
Markus Lenski, Dresden, DE;
Gunter Grasshoff, Radebeul, DE;
GlobalFoundries, Inc., Grand Cayman, KY;
Abstract
A spacer structure in sophisticated semiconductor devices is formed on the basis of a high-k dielectric material, which provides superior etch resistivity compared to conventionally used silicon dioxide liners. Consequently, a reduced thickness of the etch stop material may nevertheless provide superior etch resistivity, thereby reducing negative effects, such as dopant loss in the drain and source extension regions, creating a pronounced surface topography and the like, as are typically associated with conventional spacer material systems.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile