The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Aug. 05, 2019
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Hans-Juergen Thees, Dresden, DE;

Peter Baars, Dresden, DE;

Assignee:

GlobalFoundries U.S. Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 21/266 (2006.01); H01L 27/11 (2006.01); H01L 21/3105 (2006.01); H01L 29/786 (2006.01); H01L 29/08 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6653 (2013.01); H01L 21/266 (2013.01); H01L 21/31053 (2013.01); H01L 21/31144 (2013.01); H01L 27/1112 (2013.01); H01L 29/0847 (2013.01); H01L 29/78621 (2013.01); H01L 21/31116 (2013.01); H01L 21/76283 (2013.01); H01L 29/66757 (2013.01); H01L 29/66772 (2013.01);
Abstract

A semiconductor device is disclosed including a gate electrode structure and raised drain and source regions that extend to a first height level and a sidewall spacer element positioned adjacent the sidewalls of the gate electrode structure between the raised drain and source regions and the gate electrode structure. The sidewall spacer element includes an upper portion that extends above the first height level wherein an inner part of the spacer element faces the gate electrode structure and extends to a second height level that is less than a third height level of an outer part of the upper portion of the spacer element.


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