The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Feb. 01, 2013
Globalfoundries Inc., Grand Cayman, KY;
Stephan Kronholz, Dresden, DE;
Joachim Patzer, Langebrueck, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Disclosed herein are various methods of forming a silicon/germanium protection layer above source/drain regions of a transistor. One method disclosed herein includes forming a plurality of recesses in a substrate proximate the gate structure, forming a semiconductor material in the recesses, forming at least one layer of silicon above the semiconductor material, and forming a cap layer comprised of silicon germanium on the layer of silicon. One device disclosed herein includes a gate structure positioned above a substrate, a plurality of recesses formed in the substrate proximate the gate structure, at least one layer of semiconductor material positioned at least partially in the recesses, a layer of silicon positioned above the at least one layer of semiconductor material, and a cap layer comprised of silicon/germanium positioned on the layer of silicon.