The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Jun. 10, 2022
Applicant:

Globalfoundries Dresden Module One Limited Liability Company & Co. KG, Dresden, DE;

Inventors:

Thorsten E. Kammler, Dresden, DE;

Robert Viktor Seidel, Dresden, DE;

Michael Grillberger, Radebeul, DE;

Oliver Witnik, Dresden, DE;

Nicole Brach, Dresden, DE;

Raghav Shankar Uma Sankar, Dresden, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/40 (2025.01); G02B 5/20 (2006.01); H10F 77/30 (2025.01);
U.S. Cl.
CPC ...
H10F 77/413 (2025.01); H10F 77/306 (2025.01); G02B 5/207 (2013.01);
Abstract

A reflective semiconductor device includes an integrated circuit (IC) structure, and a pair of mirror elements over the IC structure. The pair of mirror elements are separated by a trench. Each mirror element includes a mirror layer of, for example, aluminum, on the IC structure, and a low temperature oxide (LTO) layer on the mirror layer. A high temperature oxide (HTO) layer is over the pair of mirror elements and fills the trench. A liquid crystal layer over the mirror elements provides a liquid crystal on semiconductor (LCOS) device. The two-oxide layer prevents mirror layer creep and/or agglomeration during formation of the HTO layer and provide a suitable surface for LCOS assembly without using specialized alloys.


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