The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Sep. 29, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Jürgen Faul, Radebeul, DE;
Thorsten Kammler, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/28255 (2013.01); H01L 21/76283 (2013.01); H01L 21/84 (2013.01); H01L 27/0922 (2013.01); H01L 21/823412 (2013.01);
Abstract
In fully depleted SOI transistors, specifically designed semiconductor materials may be provided for different types of transistors, thereby, for instance, enabling a reduction of hot carrier injection in transistors that are required to be operated at a moderately high operating voltage. To this end, well-controllable epitaxial growth techniques may be applied selectively for one type of transistor, while not unduly affecting the adjustment of material characteristics of a different type of transistor.