The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Mar. 03, 2016
Globalfoundries Inc., Grand Cayman, KY;
Elliot John Smith, Dresden, DE;
Thorsten Kammler, Dresden, DE;
Andreas Hellmich, Dresden, DE;
Carsten Grass, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method of forming a gate structure over a hybrid substrate structure with topography having a bulk region and an SOI region is disclosed including forming a gate material layer above the SOI and bulk regions, forming a mask layer above the gate material layer, forming a first planarization layer above the mask layer, forming a first gate structure masking pattern above the first planarization layer, patterning the first planarization layer in alignment with the first gate structure masking pattern, and patterning the mask layer in accordance with the patterned first planarization layer, resulting in a gate mask disposed above the gate material layer.