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For the Inventor, By the Inventor

Dresden, Germany

Carsten Grass

USPTO Granted Patents = 12 

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 46(Granted Patents)


Company Filing History:

goldMedal12 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2014-2018

where 'Filed Patents' based on already Granted Patents

12 patents (USPTO):
1. 10079300 - Semiconductor circuit element (2018-09-18),
2. 9608110 - Methods of forming a semiconductor circuit element and semiconductor circuit element (2017-03-28),
3. 9583640 - Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structure (2017-02-28),
4. 9514942 - Method of forming a gate mask for fabricating a structure of gate lines (2016-12-06),
5. 9508588 - Methods for fabricating integrated circuits with isolation regions having uniform step heights (2016-11-29),
6. 9337045 - Methods of forming a semiconductor circuit element and semiconductor circuit element (2016-05-10),
7. 9123827 - Methods for fabricating integrated circuits with fully silicided gate electrode structures (2015-09-01),
8. 9123825 - Methods for fabricating FinFET integrated circuits using laser interference lithography techniques (2015-09-01),
9. 8993459 - Method of forming a material layer in a semiconductor structure (2015-03-31),
10. 8951877 - Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatment (2015-02-10),
11. 8872285 - Metal gate structure for semiconductor devices (2014-10-28),
12. 8735240 - CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removal (2014-05-27),

Title: Inventor Carsten Grass: Leading Innovations in Semiconductor Technology

Introduction

Carsten Grass is an innovative inventor based in Dresden, Germany, known for his significant contributions to semiconductor technology. With a total of 12 patents to his name, Grass has made strides in developing advanced semiconductor circuit elements that push the boundaries of electronic performance.

Latest Patents

His latest breakthrough involves a semiconductor circuit element that features a first semiconductor device positioned above a designated active region of a semiconductor substrate. This device incorporates a first gate structure with a high-k dielectric layer. Complementing this is a second semiconductor device with its own unique gate structure, which utilizes a ferroelectric material distinct from the first. His patents also outline methods for forming these semiconductor circuit elements, emphasizing innovative material combinations that enhance device functionality.

Career Highlights

Carsten Grass is currently employed at Globalfoundries Inc., where he plays a pivotal role in research and development. His expertise in semiconductor technologies underscores his commitment to advancing the field, resulting in numerous patented inventions that enhance electronic performance and efficiency.

Collaborations

Grass collaborates with talented coworkers, including Martin Trentzsch and Sven Beyer. Together, they form a dynamic team contributing to significant advancements in semiconductor design and manufacturing processes.

Conclusion

Through his ongoing efforts and innovative spirit, Carsten Grass exemplifies the drive for excellence in the field of semiconductor technology. His contributions not only benefit Globalfoundries Inc. but also pave the way for future advancements in electronic devices. As the demand for sophisticated semiconductor solutions grows, inventors like Grass remain at the forefront of technological innovation.

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