The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Aug. 31, 2012
Applicants:

Carsten Grass, Dresden, DE;

Martin Trentzsch, Radebeul, DE;

Boris Bayha, Dresden, DE;

Peter Krottenthaler, Simbach, DE;

Inventors:

Carsten Grass, Dresden, DE;

Martin Trentzsch, Radebeul, DE;

Boris Bayha, Dresden, DE;

Peter Krottenthaler, Simbach, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/10 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); H01L 21/022 (2013.01); H01L 21/02271 (2013.01); H01L 21/02323 (2013.01); H01L 21/0234 (2013.01); H01L 21/28255 (2013.01); H01L 29/1054 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract

A method comprises depositing a first portion of a first material layer on a semiconductor structure. A first run of a post-treatment process is performed for modifying at least the first portion of the first material layer. After the first run of the post-treatment process, a second portion of the first material layer is deposited. The second portion is formed of substantially the same material as the first portion. After the deposition of the second portion of the first material layer, a second run of the post-treatment process is performed for modifying at least the second portion of the first material layer.


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