The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Feb. 07, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Peter Baars, Dresden, DE;
Carsten Grass, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 29/51 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 27/1159 (2017.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78391 (2014.09); H01L 21/28291 (2013.01); H01L 21/823857 (2013.01); H01L 27/0922 (2013.01); H01L 27/1159 (2013.01); H01L 29/513 (2013.01); H01L 29/516 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01);
Abstract
A semiconductor circuit element includes a first semiconductor device positioned in and above a first active region of a semiconductor substrate and a second semiconductor device positioned in and above a second active region of the semiconductor substrate. The first semiconductor device includes a first gate structure having a first gate dielectric layer that includes a first high-k material, and the second semiconductor device includes a second gate structure having a second gate dielectric layer that includes a ferroelectric material that is different from the first high-k material.